Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon nitride on HTO
  1 Piranha clean
  2 Pre-furnace clean
  2.1 RCA clean
  2.2 HF dip
  3 High temperature silicon dioxide (HTO) LPCVD
Materialsilicon dioxideResidual stress-155 MPa
  4 Silicon nitride LPCVD
Materialsilicon nitrideResidual stress1250 MPa
on front
  5 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.2 .. 1 µm
0.2 .. 1 µm
Batch size 24
Residual stress -50 .. 50 MPa
Sides processed both
Silicon dioxide thickness 0 .. 1 µm
Silicon nitride thickness 0 .. 1 µm
Wafer size
Wafer size
Comments:
  • The input parameter "thickness" refers to the overall thickness of the composite film. Thickness
    values for individual films are calculated by the fab site to minimize the overall residual stress.