Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Dry oxidation
  1 Pre-furnace clean
  1.1 RCA clean
  1.2 HF dip
  2 Dry oxidation
Materialsilicon dioxide
on front
  3 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 0.8 µm
0.1 .. 0.8 µm
Material silicon dioxide
Wafer size
Wafer size