Process Hierarchy

on front
  Dry oxidation
  1.1 RCA clean
  1.2 HF dip
Materialsilicon dioxide
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 0.8 µm
0.1 .. 0.8 µm
Material silicon dioxide
Wafer size
Wafer size