Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Anodic bonding (with alignment)
  1 Piranha clean II (non-MOS clean)
  2 Anodic bonding (with alignment)
Process characteristics:
Pressure
Pressure of process chamber during processing
Pressure
Pressure of process chamber during processing
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded*
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded*
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Batch size 2
Temperature 450 .. 500 °C
Voltage 1500 V
Wafer size
Wafer size
MOS clean no