Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wet oxidation
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 1.5 µm
0.1 .. 1.5 µm
Material silicon dioxide
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Temperature 900 .. 1100 °C
Wafer size
Wafer size
Equipment Furnace (oxidation)
  • No metals are allowed in furnace.
Equipment characteristics:
Batch sizes 100 mm: 25
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm