Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon DRIE with photolithography (Unaxis VLR 700)
on front
  1 Contact photolithography (Automated)
  1.1 HMDS Vapor Prime
on front
  1.2 Photoresist Spin Coat ACS200 (AZ 9245)
  1.3 Photoresist Softbake ACS200
  1.4 Edge bead removal
  1.5 Contact flat alignment and exposure
  1.6 Photoresist Develop (AZ 9245)
  1.7 Linewidth Microscope Measurement
on front
  2 Silicon DRIE (Bosch Process)
Materialsilicon
on front
  3 Cool grease bonding
MaterialAIT cool grease 7016Thickness4 .. 6 µm
  4 Microscope inspection
  5 SEM Wafer Inspection
  6 Cool grease removal
MaterialAIT cool grease 7016
Process characteristics:
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer
unconstrained
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Min feature size
Min feature size*
unconstrained
Perform edge bead removal
Perform edge bead removal*
yes no
Perform handle wafer mounting
If mounting of device wafers on handle wafers is necessary for processing, select yes here.
Perform handle wafer mounting*
yes no
If mounting of device wafers on handle wafers is necessary for processing, select yes here.
Perform microscope inspection
Perform microscope inspection*
yes no
Perform sem sample analysis
Perform sem sample analysis*
yes no
Perform stylus profilometry
Perform stylus profilometry*
yes no
Resist thickness
Resist thickness*
Aspect ratio 15
Etch rate 4 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Mask materials
Materials that can be used to mask etching.
 AZ 9245, AZ 5214e
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Wafer size
Wafer size