Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  4X DUV photolithography (with BARC)
  1 Dehydration bake
on front
  2 Bottom anti-reflection coating (BARC)
MaterialBARCThickness700 Å
on front
  3 DUV photoresist coat (Shipley UV210)
MaterialShipley UV210
  4 DUV photoresist softbake
MaterialShipley UV210
on front
  5 DUV Stepper front-front alignment
on front
  6 DUV exposure
MaterialShipley UV210
  7 DUV post-exposure bake
MaterialShipley UV210
on front
  8 DUV develop (Shipley UV210)
MaterialShipley UV210
  9 DUV photoresist hardbake
MaterialShipley UV210
on front
  10 Bottom anti-reflection coating (BARC) etch
Depth700 ÅMaterialBARC
Process characteristics:
Perform BARC
Add steps for a bottom-anti-reflective coating (BARC)
Perform BARC*
yes no
Add steps for a bottom-anti-reflective coating (BARC)
Perform hard bake
Perform hard bake*
yes no
Batch size 12
Magnification 4
Material Shipley UV210
Max field size 21 mm
Min feature size 0.35 µm
Resist thickness 0.8 µm
Wafer size
Wafer size
Comments:
  • Maximum field size is 21 mm x 21 mm.
  • Reticle size is 6 inch, thickness .120 to .250 inches, QUARTZ ONLY
  • Numerical aperture is 0.54.
  • SEMI-standard 6 inch wafers are used.
Attachments
asml_fiducials.gds (76.0 KB, application/octet-stream) [Browse]
attached by ozgur (Mehmet Ozgur) on 2004-01-06 16:19