Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride PECVD (Unaxis VLR 700)
  1 Silicon nitride PECVD (Unaxis VLR 700)
Materialsilicon nitrideRefractive index1.9Residual stress1850 MPa
  2 Spectroscopic Ellipsometric Single Point Film Thickness Measurement
Refractive index1 .. 4Thickness0.01 .. 2 µm
Process characteristics:
Perform RTA
Perform RTA*
yes no
Perform thickness metrology
Select one of the options presented here
Perform thickness metrology*
Select one of the options presented here
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.15 µm
0 .. 0.15 µm
Material silicon nitride
Wafer size
Wafer size