Process Hierarchy

on front
  Silicon dioxide PECVD (PlasmaTherm 790)
Materialsilicon dioxideRefractive index1.45
Refractive index1 .. 4Thickness0.01 .. 2 µm
Process characteristics:
Perform densification
5min @800C
Perform densification*
yes no
5min @800C
Perform thickness metrology
Select one of the options presented here.
Perform thickness metrology*
Select one of the options presented here.
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Material silicon dioxide
Wafer size
Wafer size