Process Hierarchy

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  Silicon dioxide PECVD (PlasmaTherm 790+)
Materialsilicon dioxideRefractive index1.45
Refractive index1 .. 4Thickness0.01 .. 2 µm
Process characteristics:
Perform densification
5min @800C
Perform densification*
yes no
5min @800C
Perform thickness metrology
Select one of the options presented here.
Perform thickness metrology*
Select one of the options presented here.
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 3 µm
0 .. 3 µm
Material silicon dioxide
Wafer size
Wafer size