Anodic bonding (air, with alignment) |
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| Alignment type Method used to align materials to be bonded. |
optical |
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| Ambient Ambient to which substrate is exposed during processing |
air |
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| Duration |
30 min |
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| Pressure Pressure of process chamber during processing |
1 atm |
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| Temperature |
400 °C |
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| Voltage |
800 V |
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| Wafer size |
|
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| Equipment |
Wafer bonder |
| Equipment characteristics: |
| Batch sizes |
100 mm: 2, 25 mm: 2, 50 mm: 2, 75 mm: 2 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Borofloat (Schott), Pyrex (Corning 7740), silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
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