Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Post-exposure bake (automated)
Batch size 1
Temperature 115 °C
Time 90 s
Wafer size
Wafer size
Equipment ACS200 coater/developer
  • Automated coater and developer. Also does vapor HMDS, and hotplate bakes.
Equipment characteristics:
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 800 µm
Comments:
  • Stated temperature and time apply to thicknesses up to 4 microns.
  • For thicknesses greater than 4 microns process the same, but start with 30-second ramp in temperature (step-down to hotplate) to 115°C
  • Also for thicknesses greater than 4 microns hold for 35 minutes between exposure and post-exposure bake. This allows
    water (which is necessary to complete the photo-reaction)
    to diffuse back into the photoresist film.