Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  NanoGetter sputter deposition
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 5 .. 500 nm
5 .. 500 nm
Ambient
Ambient to which substrate is exposed during processing
 argon
Batch size 1
Material NanoGetter
Pressure
Pressure of process chamber during processing
 7.5 mTorr
Sides processed either
Wafer size
Wafer size
Equipment Innovac sputter system
  • Three targets (one rf, two dc)
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
 1 .. 10 cm
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular, irregular, circular
Piece thickness
Range of wafer piece thickness the equipment can accept
 100 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
 1-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon germanium, Pyrex (Corning 7740)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 1000 µm
Comments:
  • The NanoGetter is comprised of a proprietary, patent pending, multi-layer structure and as the name implies the thickness of the thin film layers are in the nanometer - 5nm to 500nm- range.
  • The NanoGetter films need to be activated thermally after sealing.