Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wet Thermal Oxidation
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0.1 .. 6 µm
0.1 .. 6 µm
Material silicon dioxide
Refractive index 1.45
Sides processed both
Temperature 800 .. 1050 °C
Uniformity -0.01 .. 0.01
Wafer size
Wafer size
Equipment Tystar Oxide furnace
Equipment characteristics:
Batch sizes 100 mm: 50, 150 mm: 50
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm
Extra terms
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site.