on front Silicon dioxide PECVD (TEOS) |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
TEOS, oxygen, nitrogen |
|---|
| Material |
silicon dioxide |
|---|
| Microstructure |
amorphous |
|---|
| Sides processed |
either |
|---|
| Uniformity |
-0.03 .. 0.03 |
|---|
| Wafer size |
|
|---|
| Equipment |
Oxford Plasmalab PECVD System |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
