Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wet oxidation
  1 RCA clean
  2 Wet Thermal Oxidation
  3 Spectrophotometric film thickness measurement
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.05 .. 6 µm
0.05 .. 6 µm
Batch size 25
Excluded materials gold (category), copper
Material silicon dioxide
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Wafer size
Wafer size