Process Hierarchy

  Super low stress silicon nitride LPCVD (50 MPa)
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 4 µm
0.1 .. 4 µm
Batch size 25
Excluded materials gold (category), copper
Material silicon nitride
Pressure
Pressure of process chamber during processing
1 atm
Sides processed both
Wafer size
Wafer size