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5X I-line photolithography (OiR 897 10i): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
5X I-line photolithography (OiR 897 10i)
1
Dehydration bake
2
HMDS prime
Material
HMDS
on front
3
I-line photoresist coat (OiR 897 10i)
Material
Arch OiR 897-10i
on front
4
Photoresist softbake
Material
photoresist (category)
on front
5
5X stepper alignment and i-line exposure
on front
6
I-line develop (OiR 897 10i)
Material
Arch OiR 897-10i
on front
7
Microscope inspection
on front
8
UV bake
Process characteristics:
Perform deep uv bake
Perform deep uv bake
*
yes
no
Resist thickness
Resist thickness
*
1.0 um
2.0 um
Batch size
12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
line
Field geometry
Shape of field with dimensions characterized by the maximum field size
square
Magnification
5
Material
Arch OiR 897-10i
Max field size
10 mm
Min feature size
1 µm
Wafer size
Wafer size
150 mm