Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wet oxidation
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0.5 .. 5 µm
0.5 .. 5 µm
Allowed materials silicon, silicon dioxide, polysilicon, silicon nitride
Ambient
Ambient to which substrate is exposed during processing
 oxygen, hydrogen
Growth rate
Rate at which film grows (linear approximation)
 40 .. 100 Å/min
Material silicon dioxide
Refractive index 1.46
Sides processed both
Temperature 1100 .. 1200 °C
Uniformity 0.03
Wafer size
Wafer size
Equipment FNA1
Equipment characteristics:
Batch sizes 150 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 675 µm