Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wet oxidation
  1 RCA1 clean
  2 HF dip
  3 Wet oxidation
Allowed materialssilicon, silicon dioxide, polysilicon, silicon nitrideTemperature1100 .. 1200 °C
Refractive index1.46Uniformity0.03
  4 Spectrophotometric film thickness measurement
Process characteristics:
Thickness
Thickness*
must be 0.5 .. 5 µm
0.5 .. 5 µm
Material silicon dioxide
Wafer size
Wafer size