Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Stoichiometric silicon nitride LPCVD
  1 RCA1 clean
  2 HF dip
  3 Stoichiometric silicon nitride LPCVD
Deposition rate35 Å/minTemperature800 °C
Residual stress900 MPaUniformity0.025
  4 Spectrophotometric film thickness measurement
Process characteristics:
Thickness
Thickness*
must be 0.1 .. 1 µm
0.1 .. 1 µm
Material silicon nitride
Wafer size
Wafer size