Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  MVD of Anti-Stiction Coating (DDMS)
Process characteristics:
Perform O2 plasma surface prep
This is a default, 5-min-long, in-situ O2 clean with 80 sccm O2 @ 200 watts.
Perform O2 plasma surface prep*
yes no
This is a default, 5-min-long, in-situ O2 clean with 80 sccm O2 @ 200 watts.
Material DDMS
Sides processed both
Temperature 35 °C
Thickness 3 .. 10 Å
Wafer size
Wafer size
Equipment AMST Molecular Vapor Deposition System
Equipment characteristics:
Batch sizes 10 .. 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 fused silica, Borofloat (Schott), Pyrex (Corning 7740), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Comments:
  • DDMS: dimethyldichlorosilane
    DDMS CAS# = [75-78-5]
  • This process includes an in-situ O2 clean prior to the deposition by default. If you do not wish to use the O2 clean please unselect the "perform O2 surface prep" option above.
  • The O2 clean procedure is 5mins long with 80 sccm O2 / 200 watts.
  • Uniform contact angle not assured if plasma clean not selected.
  • The standard process with O2 clean gives a water contact angle of SiO2 after coating = 101 degrees.