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About MEMS
Anodic Bonding: View
Process Hierarchy
Bonding
Anodic bonding
Fusion bonding
Glass frit bonding
Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Anodic Bonding
Process characteristics:
Bonding Ambient
Ambient to which substrate is exposed during processing
Bonding Ambient
*
Forming Gas (N2/H2)
nitrogen
vacuum
Ambient to which substrate is exposed during processing
Wafer size
Wafer size
100 mm
150 mm
Equipment
Karl Suss SB6
Equipment characteristics:
Batch sizes
100 mm: 2, 150 mm: 2
MOS clean
no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, Corning 1737
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm