Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Diamond CVD (standard)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.5 .. 3 µm
0.5 .. 3 µm
Coeffient of Thermal Expansion (CTE)
@300K 1atm
 1.5e-06 1/°C
Deposition rate
Rate at which material is added to a wafer
 0.1 µm/hour
Excluded materials gallium arsenide, gold (category), copper
Material diamond
Microstructure polycrystalline
Pressure
Pressure of process chamber during processing
 25 Torr
Resistivity 1e+13 Ω*cm
Sides processed either
Temperature 725 °C
Uniformity -10 .. 10
Young's Modulus 1e+06 .. 1.2e+06 MPa
Wafer size
Wafer size
Equipment Model 650 Hot-Filament Diamond Deposition System
  • Large usable deposition area—350mm by 375mm (14 in. by 15 in. )
Equipment characteristics:
Batch sizes 100 mm: 9, 150 mm: 4, 200 mm: 1, 300 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 2000 µm
Comments:
  • Standard diamond films: grain size typically 50% of film thickness, with a strong Raman peak.