Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (Spray coat)
  1 HMDS Vapor Prime
  2 Photoresist Spray Coat
  3 Manual Photoresist Softbake (hotplate)
  4 Contact flat alignment and exposure
  5 Photoresist Develop (Manual)
Resist thickness1 .. 6 µm
  6 Linewidth Microscope Measurement
  7 Microscope inspection
Process characteristics:
Alignment side
Alignment side*
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer
unconstrained
Alignment type
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Alignment type*
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Min feature size
Min feature size*
unconstrained
Perform hardbake
Hardbake is optional for AZ5214E only.
No hardbake procedure is available for AZ 9245.
UV Stabilization available for AZ5214e resist and 100mm and 150mm diameter wafers only.
Perform hardbake*
Hardbake is optional for AZ5214E only. No hardbake procedure is available for AZ 9245. UV Stabilization available for AZ5214e resist and 100mm and 150mm diameter wafers only.
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer
Perform stylus profilometry*
yes no
One measurement per wafer
Resist thickness
Resist thickness*
must be 0.5 .. 2.1 µm
0.5 .. 2.1 µm
Batch size 1
Magnification 1
Materials AZ 5214e
Wafer size
Wafer size