on front Low-stress silicon nitride PECVD |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
helium, silane, ammonia, nitrogen |
|---|
| Batch size |
12 |
|---|
| Deposition rate Rate at which material is added to a wafer |
150 Å/min |
|---|
| Material |
silicon nitride |
|---|
| Microstructure |
amorphous |
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| Refractive index |
1.985 |
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| Residual stress |
100 .. 250 MPa |
|---|
| Sides processed |
either |
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| Temperature |
350 °C |
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| Uniformity |
-0.07 .. 0.07 |
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| Wafer size |
|
|---|
| Equipment |
Custom PECVD |
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Borofloat (Schott), indium phosphide, silicon, gallium arsenide, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 2000 µm |
|---|
