Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon oxy-nitride PECVD
Process characteristics:
Refractive index
Please enter target index value.
Refractive index*
Please enter target index value., must be 1.46 .. 1.98
1.46 .. 1.98
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 4 µm
0.01 .. 4 µm
Ambient
Ambient to which substrate is exposed during processing
 helium, silane, nitrous oxide, ammonia, nitrogen
Batch size 12
Material silicon oxy-nitride
Microstructure amorphous
Sides processed either
Temperature 350 °C
Uniformity -0.07 .. 0.07
Wafer size
Wafer size
Equipment Custom PECVD
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 fused silica, Borofloat (Schott), indium phosphide, silicon, gallium arsenide, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 2000 µm