on front Silicon oxy-nitride PECVD |
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| Process characteristics: |
| Refractive index Please enter target index value. |
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| Thickness Amount of material added to a wafer |
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| Ambient Ambient to which substrate is exposed during processing |
helium, silane, nitrous oxide, ammonia, nitrogen |
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| Batch size |
12 |
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| Material |
silicon oxy-nitride |
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| Microstructure |
amorphous |
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| Sides processed |
either |
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| Temperature |
350 °C |
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| Uniformity |
-0.07 .. 0.07 |
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| Wafer size |
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| Equipment |
Custom PECVD |
| Equipment characteristics: |
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Borofloat (Schott), indium phosphide, silicon, gallium arsenide, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 2000 µm |
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