on front Silicon carbide (SiC) PECVD Down |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
|---|
| Batch size |
12 |
|---|
| Material |
silicon carbide |
|---|
| Microstructure |
amorphous |
|---|
| Sides processed |
either |
|---|
| Temperature |
350 °C |
|---|
| Uniformity |
-0.07 .. 0.07 |
|---|
| Wafer size |
|
|---|
| Equipment |
Custom PECVD |
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Borofloat (Schott), indium phosphide, silicon, gallium arsenide, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 2000 µm |
|---|
