Process Hierarchy

on front
  Silicon carbide (SiC) PECVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 0.5 µm
0.01 .. 0.5 µm
Ambient
Ambient to which substrate is exposed during processing
nitrogen
Batch size 12
Material silicon carbide
Microstructure amorphous
Sides processed either
Temperature 350 °C
Uniformity -0.07 .. 0.07
Wafer size
Wafer size
Equipment Custom PECVD
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, Borofloat (Schott), indium phosphide, silicon, gallium arsenide, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 2000 µm