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| Process characteristics: |
| Material |
|
|---|
| Plating area Area to be plated. |
|
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| Thickness Amount of material added to a wafer |
|
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| Aspect ratio |
0.1 .. 15 |
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| Sides processed |
either |
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| Temperature |
25 .. 60 °C |
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| Wafer size |
|
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| Equipment |
Custom Plating cell Model 1 |
| Equipment characteristics: |
| Batch sizes |
100 .. 200 mm: 1 |
|---|
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), silicon on insulator, silicon, ceramic, gallium arsenide, fused silica, Borofloat (Schott), glass-ceramic |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
