Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  E-beam Lithography
  1 HMDS Vapor Prime (Manual)
MaterialHMDS
on front
  2 E-Beam Resist Coat
  3 E-beam Resist Hotplate Bake
  4 E-beam exposure (ebeam)
  5 E-Beam resist develop
  6 Microscope inspection
Process characteristics:
Alignment type
Alignment requirement for e-beam lithography
Alignment type*
Alignment requirement for e-beam lithography
Material
Material*
Min feature size
Min feature size*
must be 10 .. 10000 nm
10 .. 10000 nm
Resist thickness
Resist thickness*
must be 0.1 .. 1 µm
0.1 .. 1 µm
Temperature
Resist Prebake temperature
Temperature*
Resist Prebake temperature, must be 25 .. 200 °C
25 .. 200 °C
Time
Write time per substrate
Time*
Write time per substrate, must be 1 .. 600 min
1 .. 600 min
Batch size 1
Magnification 1
Wafer size
Wafer size