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About MEMS
POCl3 diffusion: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Diffusion
Ion implantation
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
POCl3 diffusion
Ambient
Ambient to which substrate is exposed during processing
nitrogen
Batch size
25
Film grown
Material grown during a process
silicon dioxide
Growth rate
Rate at which film grows (linear approximation)
0.03 nm/min
Material
phosphoryl chloride
Process duration
3 hour
Sides processed
both
Temperature
950 °C
Thermal duration
45 min
Wafer size
Wafer size
100 mm
150 mm
Equipment
Tylan/Tystar Furnaces (PSG tube)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm