Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride PECVD
  1 Clean (metal)
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  2 Silicon nitride PECVD
Materialsilicon nitrideRefractive index2.002Residual stress50 MPa
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  3 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Are wafers metalized
Are wafers metalized*
yes no
Perform clean
Perform clean*
yes no
Thickness
Thickness*
must be 0.01 .. 3.25 µm
0.01 .. 3.25 µm
Material silicon nitride
Wafer size
Wafer size