Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Deep boron diffusion (Single sided)
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
on front
  2 Boron diffusion
Materialboron
  3 HF etch (10:1)
Materialsilicon dioxide
on front
  4 Sheet resistance measurement
Process characteristics:
Concentration
Concentration*
must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 14 µm
0 .. 14 µm
Batch sizes 100 mm: 24, 150 mm: 12
Excluded materials gold
Process both sides no
Wafer size
Wafer size
Comments:
  • Though 1e20 at 12um may be possible, due to the very long time required for such deep diffusion, we will limit our delivered concentration and depth to 5e19 atoms/cc at 10 micrometers.