Process Hierarchy

on front
  Deep boron diffusion (Single sided)
  1.2 10:1 HF dip
on front
  2 Boron diffusion
Materialsilicon dioxide
Process characteristics:
must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 14 µm
0 .. 14 µm
Batch sizes 100 mm: 24, 150 mm: 12
Excluded materials gold
Process both sides no
Wafer size
Wafer size
  • Though 1e20 at 12um may be possible, due to the very long time required for such deep diffusion, we will limit our delivered concentration and depth to 5e19 atoms/cc at 10 micrometers.