Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  LTO LPCVD
  1 Pre-LPCVD clean
  1.1 4:1 Sulfuric/peroxide bath
  1.2 HCl bath
  1.3 50:1 HF dip
  2 LTO LPCVD
Materialsilicon dioxideResidual stress-300 .. -200 MPa
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.05 .. 3 µm
0.05 .. 3 µm
Material silicon dioxide
Wafer size
Wafer size