Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Wet oxidation
  1 RCA clean with HF Dip (Pre-furnace clean)
  1.1 RCA clean
  1.2 HF Dip
  2 Dry/wet/dry oxidation
Materialsilicon dioxide
on front
  3 Spectrophotometric film thickness measurement
Thickness20 .. 5000 nm
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Excluded materials gold (category), copper
Material silicon dioxide
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Wafer size
Wafer size
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.