Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact I-line photolithography with back protected (front-front align, OiR 897 10i)
  1 Dehydration bake
  2 HMDS prime
MaterialHMDS
on back
  3 I-line photoresist coat (OiR 897 10i)
MaterialArch OiR 897-10i
  4 Photoresist hardbake
Materialphotoresist (category)
on front
  5 I-line photoresist coat (OiR 897 10i)
MaterialArch OiR 897-10i
on front
  6 Photoresist softbake
Materialphotoresist (category)
on front
  7 Contact front-front alignment
on front
  8 Contact I-line exposure
MaterialArch OiR 897-10i
on front
  9 I-line develop (OiR 897 10i)
MaterialArch OiR 897-10i
on front
  10 Microscope inspection
on front
  11 UV bake
Process characteristics:
Perform backside protect
Perform backside protect*
yes no
Perform deep uv bake
Perform deep uv bake*
yes no
Resist thickness
Resist thickness*
Batch size 12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Material Arch OiR 897-10i
Max field size 150 mm
Min feature size 5 µm
Wafer size
Wafer size
Comments: