Process Hierarchy

on front
  Silicon nitride LPCVD
  1.1 RCA clean
  1.2 HF Dip
Measured film thickness variation (+/- %)3.2Materialsilicon nitrideResidual stress1100 MPa
Thickness20 .. 5000 nm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 0.2 µm
0.1 .. 0.2 µm
Excluded materials gold (category), copper
Material silicon nitride
Wafer size
Wafer size
Extra terms