Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Dry oxidation
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
  2 Dry oxidation
Materialsilicon dioxide
on front
  3 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.25 µm
0 .. 0.25 µm
Batch sizes 100 mm: 24, 150 mm: 24
Excluded materials gold
Material silicon dioxide
Wafer size
Wafer size