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X-ray photolithography (front-front align) (PMMA): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
X-ray photolithography (front-front align) (PMMA)
1
PMMA resist sheet bonding
on front
2
Surface fly-cutting
Material
photoresist (category)
on front
3
X-ray front-front align
on front
4
X-ray exposure
Material
PMMA
5
Photoresist develop (PMMA)
Material
PMMA
Process characteristics:
Resist thickness
Resist thickness
*
µm
must be 0 .. 550 µm
0 .. 550 µm
Thickness removed
Amount of material removed
0 .. 500 µm
Wafer size
Wafer size
100 mm