Process Hierarchy

on front
  X-ray photolithography (front-front align) (PMMA)
on front
  2 Surface fly-cutting
Materialphotoresist (category)
on front
  3 X-ray front-front align
on front
  4 X-ray exposure
MaterialPMMA
MaterialPMMA
Process characteristics:
Resist thickness
Resist thickness*
must be 0 .. 550 µm
0 .. 550 µm
Thickness removed
Amount of material removed
0 .. 500 µm
Wafer size
Wafer size