Process Hierarchy

on front
  Dry oxidation
  1.1 RCA clean
  1.2 HF Dip
Materialsilicon dioxide
Thickness20 .. 5000 nm
Process characteristics:
Perform clean
Perform clean*
yes no
Amount of material added to a wafer
Amount of material added to a wafer, must be 20 .. 100 nm
20 .. 100 nm
Excluded materials gold (category), copper
Material silicon dioxide
Pressure of process chamber during processing
1 atm
Sides processed both
Wafer size
Wafer size
Extra terms