Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Deep boron diffusion with drive-in
  1 Piranha clean
  2 Pre-furnace clean
  2.1 RCA clean
  2.2 HF dip
  3 Boron pre-deposition
Materialboron
  4 Boron drive-in
  5 HF etch
Materialsilicon dioxide
Process characteristics:
Concentration
Other concentrations are possible but may require characterization
Concentration*
Other concentrations are possible but may require characterization
Diffusion depth
Other depths are possible but may require characterization
Diffusion depth*
Other depths are possible but may require characterization
Batch size 24
Wafer size
Wafer size
Comments:
  • Furnace capable of shallow and deep Boron diffusions using a B2O3 containing solid source.
  • Maximum depth of deep diffusion is 15 um.
  • "Diffusion depth" is the depth at which boron concentration equals the user-requested concentration value.
  • Expect up to 30% loss of wafers for each run.
  • Wafers must have been Pre-Furnace Cleaned immediately prior to diffusion.
  • Other concentrations and diffusion depths may be requested, but will require characterization at additional cost.