Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Aligned fusion bonding
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
  2 Aligned fusion prebond
  3 Nitrogen anneal
Process characteristics:
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded*
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded*
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Anneal duration 30 min
Batch size 2
Temperature 1100 °C
Wafer size
Wafer size