Process Hierarchy

  Aligned fusion bonding
  1.2 10:1 HF dip
Process characteristics:
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded*
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded*
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Anneal duration 30 min
Batch size 2
Temperature 1100 °C
Wafer size
Wafer size