Process Hierarchy

  Phosphorus diffusion with drive-in
  2.1 RCA clean
  2.2 HF dip
Materialphosphoryl chloride
  5 HF etch
Materialsilicon dioxide
Process characteristics:
Concentration
Concentration*
must be 0 .. 7e+20 atom/cc
0 .. 7e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 15 µm
0 .. 15 µm
Batch size 24
Wafer size
Wafer size