Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Wet oxidation
  1 RCA clean with HF dip
  2 Wet oxidation
Materialsilicon dioxide
on front
  3 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 1.5 µm
0.1 .. 1.5 µm
Batch sizes 100 mm: 25
Excluded materials metal (category)
Material silicon dioxide
Wafer size
Wafer size