Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon dioxide PECVD (Unaxis VLR 700)
on front
  1 Silicon dioxide VLR700 PECVD
Materialsilicon dioxideRefractive index1.45Residual stress-250 MPa
  2 Rapid Thermal Anneal Oxide, Nitride (air, oxygen, nitrogen)
  3 Spectroscopic Ellipsometric Single Point Film Thickness Measurement
Refractive index1 .. 4Thickness0.01 .. 2 µm
Process characteristics:
Perform densification
5min @800C
Perform densification*
yes no
5min @800C
Perform thickness metrology
Select one of the options presented here
Perform thickness metrology*
Select one of the options presented here
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Material silicon dioxide
Wafer size
Wafer size