Process Hierarchy

on front
  Silicon dioxide PECVD (Unaxis VLR 700)
Materialsilicon dioxideRefractive index1.45Residual stress-250 MPa
Refractive index1 .. 4Thickness0.01 .. 2 µm
Process characteristics:
Perform densification
5min @800C
Perform densification*
yes no
5min @800C
Perform thickness metrology
Select one of the options presented here
Perform thickness metrology*
Select one of the options presented here
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Material silicon dioxide
Wafer size
Wafer size