Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Deep boron diffusion (Double-sided)
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
  2 Boron diffusion
Materialboron
  3 Wet oxidation
  4 Buffered HF etch (5:1)
on front
  5 Sheet resistance measurement
Process characteristics:
Concentration
Concentration*
must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 14 µm
0 .. 14 µm
Batch sizes 100 mm: 12, 150 mm: 6
Excluded materials gold
Process both sides yes
Wafer size
Wafer size